Bitline governed approach for coarse/fine programming

In a system for programming non-volatile storage, technology is disclosed for programming with greater precision and reasonable program times. In one embodiment, a first voltage is applied to a bit line for a first non-volatile storage element in order to inhibit that first non-volatile storage elem...

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Bibliographic Details
Main Authors Guterman, Daniel C, Mokhlesi, Nima, Fong, Yupin
Format Patent
LanguageEnglish
Published 08.08.2006
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Summary:In a system for programming non-volatile storage, technology is disclosed for programming with greater precision and reasonable program times. In one embodiment, a first voltage is applied to a bit line for a first non-volatile storage element in order to inhibit that first non-volatile storage element. A first program voltage is applied to the first non-volatile storage element. For example, a program pulse is applied to a control gate for the first non-volatile storage element. During the program pulse, the bit line is changed from said first voltage to a second voltage, where the second voltage allows the first non-volatile storage element to be programmed.