Method, apparatus and magnet assembly for enhancing and localizing a capacitively coupled plasma
A magnetically enhanced plasma is produced with a permanent magnet assembly adjacent to a radio frequency (RF) biased wafer support electrode in a vacuum processing chamber of a semiconductor wafer processing apparatus. An annular peripheral region is provided on the wafer support around the perimet...
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| Format | Patent |
| Language | English |
| Published |
13.06.2006
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| Online Access | Get full text |
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| Summary: | A magnetically enhanced plasma is produced with a permanent magnet assembly adjacent to a radio frequency (RF) biased wafer support electrode in a vacuum processing chamber of a semiconductor wafer processing apparatus. An annular peripheral region is provided on the wafer support around the perimeter of the wafer being processed. A magnet arrangement using a plurality of magnet rings forms a magnetic tunnel over the peripheral region at which the plasma is generated away from the wafer. The magnetic field has components parallel to the substrate support surface over the annular peripheral region but which are perpendicular to the surface at the wafer. Preferably, the magnetic field has a flat portion parallel to the support surface in the peripheral region. Plasma propagates by diffusion from the peripheral region across the wafer surface. The magnets can be manipulated to optimize plasma uniformity adjacent the substrate being processed. |
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