Widely wavelength tunable integrated semiconductor device and method for widely wavelength tuning semiconductor devices

Alternative laser structures, which have potentially the same tuning performance as (S)SG-DBR and GCSR lasers, and a fabrication process which is similar to that of the (S)SG-DBR laser, are presented. The advantage of these structures is that the output power does not pass through a long passive reg...

Full description

Saved in:
Bibliographic Details
Main Authors Sarlet, Gert, Buus, Jens, Baets, Roel
Format Patent
LanguageEnglish
Published 06.06.2006
Online AccessGet full text

Cover

More Information
Summary:Alternative laser structures, which have potentially the same tuning performance as (S)SG-DBR and GCSR lasers, and a fabrication process which is similar to that of the (S)SG-DBR laser, are presented. The advantage of these structures is that the output power does not pass through a long passive region.