Sealed pores in low-k material damascene conductive structures
2An oxide layer is used to seal pores in porous low-dielectric constant materials, thus preventing the migration of subsequently deposited copper materials into the porous low-dielectric constant materials in damascene processes. The oxide layer is deposited over the inner surface of at least one po...
Saved in:
| Main Author | |
|---|---|
| Format | Patent |
| Language | English |
| Published |
30.05.2006
|
| Online Access | Get full text |
Cover
Loading…
| Summary: | 2An oxide layer is used to seal pores in porous low-dielectric constant materials, thus preventing the migration of subsequently deposited copper materials into the porous low-dielectric constant materials in damascene processes. The oxide layer is deposited over the inner surface of at least one pore along a sidewall of the patterned low-dielectric constant material. In one embodiment, the oxide layer is deposited using atomic layer deposition (ALD), and the oxide layer comprises SiO. |
|---|