Semiconductor integrated circuit device and method of manufacturing the same
A semiconductor integrated circuit device is provided which includes a wire having a diameter equal to or less than 30 μm, and a connected member molded by a resin. The connected member includes a metal layer including a palladium layer provided at a portion to which said wire is connected. A solder...
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| Main Authors | , , |
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| Format | Patent |
| Language | English |
| Published |
02.05.2006
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| Online Access | Get full text |
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| Summary: | A semiconductor integrated circuit device is provided which includes a wire having a diameter equal to or less than 30 μm, and a connected member molded by a resin. The connected member includes a metal layer including a palladium layer provided at a portion to which said wire is connected. A solder containing Pb as a main composition metal is provided at a portion outside a portion molded by the resin. |
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