Method for manufacturing magnetic random access memory

The present invention discloses an MRAM wherein a write word line is disposed between every other set of the word lines and a ground line is disposed between every other bit lines. This structure of MRAM in accordance with the present invention, Which is similar to folded bit line DRAM having a unit...

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Bibliographic Details
Main Author Cha, Seon Yong
Format Patent
LanguageEnglish
Published 28.03.2006
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Summary:The present invention discloses an MRAM wherein a write word line is disposed between every other set of the word lines and a ground line is disposed between every other bit lines. This structure of MRAM in accordance with the present invention, Which is similar to folded bit line DRAM having a unit cell area of 8F2, allows read and write operation of MRAM with reduced number of required lines.