Semiconductor thin-film manufacturing method, semiconductor device manufacturing method, semiconductor device, integrated circuit, electro-optical device, and electronic appliance

• Main Author: Hiroshima, Yasushi
• Format: Patent
• Language: English
• Published: 06.09.2005

According to the semiconductor thin-film and semiconductor device manufacturing method of the present invention, an insulating film having a through-hole between two layers of silicon film is provided, the silicon film is partially melted by irradiating a laser thereon, and a substantially monocrystalline film is continuously formed extending via the through-hole from at least part of the layer of silicon film below the insulating film that continues to the through-hole, to at least part of the layer of silicon film above the insulating film. It is therefore sufficient to form a through-hole with a larger diameter than that of a hole formed by the conventional method, because the diameter of the through-hole in the insulating film may be the same size or slightly smaller than the size of a single crystal grain that comprises the polycrystal formed in the silicon film below the insulating film. Costly precision exposure devices and etching devices are therefore unnecessary. Numerous high-performance semiconductor devices can also be formed easily on a large glass substrate, as in large liquid-crystal displays and the like.