Method of manufacturing a semiconductor component that includes self-aligning a gate electrode to a field plate

• Main Authors: Redd, Randy D, Fisher, Paul A, Hartin, Olin L, Klingbeil, Lawrence S, Lan, Ellen, Li, Hsin-Hua P, Weitzel, Charles E
• Format: Patent
• Language: English
• Published: 06.09.2005

In one embodiment of the invention, a semiconductor component includes a semiconductor substrate, a first dielectric layer above the semiconductor substrate, a first ohmic contact region and a second ohmic contact region above the semiconductor substrate, a gate electrode above the semiconductor substrate and between the first ohmic contact region and the second ohmic contact region, a field plate above the first dielectric layer and between the gate electrode and the second ohmic contact region, a second dielectric layer above the field plate, the first dielectric layer, the first ohmic contact region, and the second ohmic contact region, and a third dielectric layer between the gate electrode and the field plate and not located above the gate electrode or the field plate.