Nonvolatile silicon/oxide/nitride/silicon/nitride/oxide/silicon memory

A nonvolatile silicon/oxide/nitride/silicon/nitride/oxide/silicon (SONSNOS) structure memory device includes a first insulating layer and a second insulating layer stacked on a channel of a substrate, a first dielectric layer and a second dielectric layer formed on the first insulating layer and und...

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Bibliographic Details
Main Authors Chae, Soo-doo, Kim, Ju-hyung, Kim, Chung-woo, Chae, Hee-soon, Ryu, Won-il
Format Patent
LanguageEnglish
Published 30.08.2005
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Summary:A nonvolatile silicon/oxide/nitride/silicon/nitride/oxide/silicon (SONSNOS) structure memory device includes a first insulating layer and a second insulating layer stacked on a channel of a substrate, a first dielectric layer and a second dielectric layer formed on the first insulating layer and under the second insulating layer, respectively, and a group IV semiconductor layer, silicon quantum dots, or metal quantum dots interposed between the first dielectric layer and the second dielectric layer. The provided SONSNOS structure memory device improves a programming rate and the capacity of the memory.