Ultrathin high-K gate dielectric with favorable interface properties for improved semiconductor device performance

• Main Authors: Gardner, Mark I, Kwong, Dim-Lee, Fulford, Jr, H. Jim
• Format: Patent
• Language: English
• Published: 28.06.2005

An ultrathin gate dielectric having a graded dielectric constant and a method for forming the same are provided. The gate dielectric is believed to allow enhanced performance of semiconductor devices including transistors and dual-gate memory cells. A thin nitrogen-containing oxide, preferably havin...