Dry etch process to edit copper lines

2 The present invention is directed to methods for editing copper features embedded within an organic body by exposing at least a portion of a top surface of the copper feature, forming a mill box there-over and then simultaneously milling both the copper feature and any organic material exposed thr...

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Bibliographic Details
Main Authors Herschbein, Steven B, Kiiskinen, Ville S, Rue, Chad, Scrudato, Carmelo F, Sievers, Michael R
Format Patent
LanguageEnglish
Published 31.05.2005
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Summary:2 The present invention is directed to methods for editing copper features embedded within an organic body by exposing at least a portion of a top surface of the copper feature, forming a mill box there-over and then simultaneously milling both the copper feature and any organic material exposed through the mill box in a single step using an ion beam in combination with a XeFgas for a dwell time of at least 10 milliseconds. The invention dramatically increases the efficiency of Focused Ion Beam milling of copper features embedded in organic layers by milling these features in a gas-depleted environment at significantly increased dwell time while avoiding the problems of graphitization, destruction of the organic layer and metal redeposition.