Apparatus and method for monitoring and tuning an ion beam in ion implantation apparatus

An ion implanter has an ion source and an ion beam extraction assembly for extracting the ions. The extraction assembly is a tetrode structure and one of the pairs of extraction electrodes has left and right ports located in opposite sides of the ion beam emerging from the ion source. The left and r...

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Bibliographic Details
Main Authors Holmes, Andrew James Timothy, Burgin, David Richard, Povall, Simon, Armour, David George, Arnold, Drew
Format Patent
LanguageEnglish
Published 24.05.2005
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Summary:An ion implanter has an ion source and an ion beam extraction assembly for extracting the ions. The extraction assembly is a tetrode structure and one of the pairs of extraction electrodes has left and right ports located in opposite sides of the ion beam emerging from the ion source. The left and right electrode ports are electrically isolated from each other and connected to independent voltage sources. The ion implanter also has a baffle plate at the entrance to a mass analyser downstream of the extraction assembly. The baffle plate is also split into two halves (′ and ″). By measuring the beam current incident on the two halves (″) of the baffle, the relative voltages supplied to the left and right electrode parts may be adjusted so as to steer the ion beam and adjust the angle of incidence of the longitudinal axis thereof relative to the input of the analysing magnet.