Method for chemical-mechanical polish control in semiconductor manufacturing
A method for planarizing the surface of a semiconductor wafer or device during manufacture. Dependencies of polish rate and substrate thickness on process parameters of downforce and polish speed, and on the characteristic product high feature area on the wafer, are explicitly defined and used to co...
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| Main Author | |
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| Format | Patent |
| Language | English |
| Published |
26.04.2005
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| Online Access | Get full text |
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| Summary: | A method for planarizing the surface of a semiconductor wafer or device during manufacture. Dependencies of polish rate and substrate thickness on process parameters of downforce and polish speed, and on the characteristic product high feature area on the wafer, are explicitly defined and used to control Chemical-Mechanical Polish in Run-to-Run and real-time semiconductor production control applications. |
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