Plasma monitoring method and semiconductor production apparatus

In certain embodiments a plasma is supplied from a plasma chamber into a reaction chamber of a plasma CVD apparatus. An electrode is disposed in the reaction chamber . A semiconductor wafer on which a thin film is to be formed is placed on the electrode . A radio-frequency wave is generated by a rad...

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Bibliographic Details
Main Authors Denda, Atsushi, Ito, Yoshinao
Format Patent
LanguageEnglish
Published 22.02.2005
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