Plasma monitoring method and semiconductor production apparatus

In certain embodiments a plasma is supplied from a plasma chamber into a reaction chamber of a plasma CVD apparatus. An electrode is disposed in the reaction chamber . A semiconductor wafer on which a thin film is to be formed is placed on the electrode . A radio-frequency wave is generated by a rad...

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Bibliographic Details
Main Authors Denda, Atsushi, Ito, Yoshinao
Format Patent
LanguageEnglish
Published 22.02.2005
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Summary:In certain embodiments a plasma is supplied from a plasma chamber into a reaction chamber of a plasma CVD apparatus. An electrode is disposed in the reaction chamber . A semiconductor wafer on which a thin film is to be formed is placed on the electrode . A radio-frequency wave is generated by a radio-frequency wave generator and supplied to the electrode via a radio-frequency matching network , a blocking capacitor , and an RF probe so as to control the plasma in the plasma chamber . A judgment device is electrically connected to the RF probe . The voltage and current are be measured by the RF probe and the judgment device is used to judge the state of the plasma in the plasma chamber