Multi-step high density plasma (HDP) process to obtain uniformly doped insulating film

A method of forming an essentially uniform doped insulating layer is disclosed. Variations in a substrate temperature that may result in a dopant gradient within a doped insulating layer can be compensated for by varying a dopant supply rate in a deposition process. One particular embodiment disclos...

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Bibliographic Details
Main Authors Phatak, Prashant B, Eisenmann, III, Frederick G, Fastow, Michal
Format Patent
LanguageEnglish
Published 08.02.2005
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Summary:A method of forming an essentially uniform doped insulating layer is disclosed. Variations in a substrate temperature that may result in a dopant gradient within a doped insulating layer can be compensated for by varying a dopant supply rate in a deposition process. One particular embodiment discloses a method of forming a high density plasma phosphosilicate glass having a phosphorous concentration of 8% or greater by weight that varies by no more than about 1% by weight throughout.