LDMOS and CMOS integrated circuit and method of making

This invention relates to the field of semiconductor integrated circuit devices, processes for making those devices and systems utilizing those devices. More specifically, the invention relates to a combined LDMOS and CMOS integrated circuit. An integrated circuit (IC) is formed on a substrate. The...

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Bibliographic Details
Main Authors Chen, Zhizang, Yeh, Bao-Sung Bruce, Wang, S. Jonathan, Peltier, Cathy P
Format Patent
LanguageEnglish
Published 16.11.2004
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Summary:This invention relates to the field of semiconductor integrated circuit devices, processes for making those devices and systems utilizing those devices. More specifically, the invention relates to a combined LDMOS and CMOS integrated circuit. An integrated circuit (IC) is formed on a substrate. The IC has a first well having a first dopant concentration that includes a second conductivity low-voltage transistor. The IC also has a second well having a dopant concentration equal to the first dopant concentration that includes a first conductivity high-voltage transistor. In addition, the IC has a third well having a second dopant concentration of an opposite type than the first well that includes a first conductivity low-voltage transistor. The first conductivity low-voltage transistor and the second conductivity low-voltage transistor are created without a threshold voltage (V) implant.