Pattern formation material and pattern formation method
The present invention relates to a pattern formation method and a pattern formation material, and more particularly, it relates to a pattern formation method for forming a resist pattern, used for forming a semiconductor device or a semiconductor integrated circuit on a semiconductor substrate, by u...
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| Main Authors | , , , , |
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| Format | Patent |
| Language | English |
| Published |
19.10.2004
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| Online Access | Get full text |
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| Summary: | The present invention relates to a pattern formation method and a pattern formation material, and more particularly, it relates to a pattern formation method for forming a resist pattern, used for forming a semiconductor device or a semiconductor integrated circuit on a semiconductor substrate, by using exposing light of a wavelength not longer than a 180 nm band and a pattern formation material used in the pattern formation method.
A pattern formation material of this invention contains a base polymer including a first unit represented by Chemical Formula 1 and a second unit represented by Chemical Formula 2, and an acid generator: wherein Rand Rare the same or different and selected from the group consisting of a hydrogen atom, a chlorine atom, a fluorine atom, an alkyl group and an alkyl group including a fluorine atom;Ris a protecting group released by an acid;m is an integer of 0 through 5; anda and b satisfy 0<a<1,0<b<1 and 0<a+b 1. |
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