Ion source and operation method thereof

1. Field of the Invention This ion source is set up to satisfy a relationwhere the arc voltage applied between a plasma production vessel and a filament is V[V], the magnetic flux density of a magnetic field within the plasma production vessel is B[T], and the shortest distance from a most frequent...

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Bibliographic Details
Main Author Yamashita, Takatoshi
Format Patent
LanguageEnglish
Published 28.09.2004
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Summary:1. Field of the Invention This ion source is set up to satisfy a relationwhere the arc voltage applied between a plasma production vessel and a filament is V[V], the magnetic flux density of a magnetic field within the plasma production vessel is B[T], and the shortest distance from a most frequent electron emission point located almost at the tip center of the filament to a wall face of the plasma production vessel is L[m].