Annealed tunneling emitter

The invention is directed to field emission devices. In particular the invention is directed to the flat field emission emitters utilizing direct tunneling and their use in electronic devices. An emitter has an electron supply layer and a tunneling layer formed on the electron supply layer. Optional...

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Bibliographic Details
Main Authors Chen, Zhizhang, Regan, Michael J, Bolf, Brian E, Novet, Thomas, Benning, Paul J, Johnstone, Mark Alan, Ramamoorthi, Sriram
Format Patent
LanguageEnglish
Published 24.08.2004
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Summary:The invention is directed to field emission devices. In particular the invention is directed to the flat field emission emitters utilizing direct tunneling and their use in electronic devices. An emitter has an electron supply layer and a tunneling layer formed on the electron supply layer. Optionally, an insulator layer is formed on the electron supply layer and has openings defined within which the tunneling layer is formed. A cathode layer is formed on the tunneling layer to provide a surface for energy emissions of electrons and/or photons. Preferably, the emitter is subjected to an annealing process thereby increasing the supply of electrons tunneled from the electron supply layer to the cathode layer.