Structure and method of forming bitline contacts for a vertical DRAM array using a line bitline contact mask

1. Field of the Invention A bitline contact and method of forming bitline contact for a vertical DRAM array using a bitline contact mask. In the method, gate conductor lines are formed. An oxide layer is deposited over the gate conductor lines, and a bitline contact mask is formed over portions of t...

Full description

Saved in:
Bibliographic Details
Main Authors Nesbit, Larry A, Faltermeier, Jonathan E, Divakaruni, Ramachandra, Bergner, Wolfgang
Format Patent
LanguageEnglish
Published 27.07.2004
Online AccessGet full text

Cover

More Information
Summary:1. Field of the Invention A bitline contact and method of forming bitline contact for a vertical DRAM array using a bitline contact mask. In the method, gate conductor lines are formed. An oxide layer is deposited over the gate conductor lines, and a bitline contact mask is formed over portions of the oxide layer. The bitline contact mask is etched, and a silicon layer is deposited on the substrate. A bitline layer is deposited on the silicon layer. A masking and etching operation is performed on the bitline layer. A Mmetal is deposited over the silicon layer and on sides of non etched portions of the bitline (M) layer to form left and right bitlines.