Method of fabricating a gate structure of a field effect transistor using a hard mask

1. Field of the Invention A method of fabricating a gate structure of a field effect transistor, comprising forming a hard mask, etching a gate electrode, and contemporaneously forming a gate dielectric and removing the hard mask.

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Bibliographic Details
Main Authors Kumar, Ajay, Nallan, Padmapani C
Format Patent
LanguageEnglish
Published 06.07.2004
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Summary:1. Field of the Invention A method of fabricating a gate structure of a field effect transistor, comprising forming a hard mask, etching a gate electrode, and contemporaneously forming a gate dielectric and removing the hard mask.