Magnetic random access memory using schottky diode

1. Technical Field A magnetic random access memory (MRAM) using a Schottky diode is disclosed. In order to achieve high integration of the memory device, a word line is formed on a semiconductor substrate without using a connection layer and a stacked structure including an MTJ cell, a semiconductor...

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Bibliographic Details
Main Author Kim, Chang Shuk
Format Patent
LanguageEnglish
Published 15.06.2004
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Summary:1. Technical Field A magnetic random access memory (MRAM) using a Schottky diode is disclosed. In order to achieve high integration of the memory device, a word line is formed on a semiconductor substrate without using a connection layer and a stacked structure including an MTJ cell, a semiconductor layer and a bit line is formed on the word line, thereby forming the Schottky diode between the MTJ cell and the bit line. As a result, a structure of the device is simplified, and the device may be highly integrated due to repeated stacking.