Twin current bipolar device with hi-lo base profile
The invention relates to the general field of bipolar transistors with particular reference to the control of base region doping and its effect on the electrical characteristics. A bipolar transistor is described whose I-V curve is such that it operates in two regions, one having low gain and low po...
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| Main Authors | , , , |
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| Format | Patent |
| Language | English |
| Published |
08.06.2004
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| Online Access | Get full text |
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| Summary: | The invention relates to the general field of bipolar transistors with particular reference to the control of base region doping and its effect on the electrical characteristics.
A bipolar transistor is described whose I-V curve is such that it operates in two regions, one having low gain and low power consumption and another having higher gain and better current driving ability. Said transistor has a base region made up of two sub regions, the region closest to the emitter having a resistivity about an order a magnitude lower than the second region (which interfaces with the collector). A key feature of the invention is that the region closest to the collector is very uniformly doped, i.e. there is no gradient or built-in field present. In order to produce such a region, epitaxial growth along with boron doping is used rather than more conventional techniques such as ion implantation and/or diffusion. |
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