Channel isolation using dielectric isolation structures

1. Field of the Invention A method is provided, the method including forming a gate dielectric above a substrate layer, and forming a gate conductor above the gate dielectric. The method also includes forming at least one dielectric isolation structure in the substrate adjacent the gate dielectric.

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Bibliographic Details
Main Authors Duane, Michael P, Wu, David D, Aminpur, Massud, Luning, Scott D
Format Patent
LanguageEnglish
Published 27.04.2004
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Summary:1. Field of the Invention A method is provided, the method including forming a gate dielectric above a substrate layer, and forming a gate conductor above the gate dielectric. The method also includes forming at least one dielectric isolation structure in the substrate adjacent the gate dielectric.