Method of fabricating semiconductor device, and semiconductor device

1. Technical Field of the Invention Wiring of the Dual-Damascene structure is formed without using the CMP method.As shown in FIG. A, oxygen ions are implanted from an upper surface under the condition that the oxygen ions reach a position a little deeper than the thickness tof the copper film on th...

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Bibliographic Details
Main Author Kobori, Etsuyoshi
Format Patent
LanguageEnglish
Published 30.03.2004
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Summary:1. Technical Field of the Invention Wiring of the Dual-Damascene structure is formed without using the CMP method.As shown in FIG. A, oxygen ions are implanted from an upper surface under the condition that the oxygen ions reach a position a little deeper than the thickness tof the copper film on the SiOlayer . Due to the foregoing, as shown in FIG. B, the copper film on the SiOlayer and the copper films on the upper portions of the first wiring section and the second wiring section are oxidized, and the oxidized layer is formed. Since the dielectric constant of copper oxide is high, the first wiring section and the second wiring section are insulated from each other. Therefore, it is possible to obtain a highly reliable wiring structure easily.