Methods for polymer removal following etch-stop layer etch

The present invention relates generally to semiconductor devices and more particularly to methods for removing polymer residue during the fabrication of interconnect layers in semiconductor devices. Cleaning methods are disclosed for removing sidewall polymers from interconnect vias or trenches, whe...

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Bibliographic Details
Main Authors Smith, Patricia Beauregard, Park, Heungsoo
Format Patent
LanguageEnglish
Published 30.03.2004
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Summary:The present invention relates generally to semiconductor devices and more particularly to methods for removing polymer residue during the fabrication of interconnect layers in semiconductor devices. Cleaning methods are disclosed for removing sidewall polymers from interconnect vias or trenches, wherein a wafer is exposed to a plasma comprising hydrogen and an inert gas in a plasma cleaning chamber following etch-stop etching.