Pattern formation material and pattern formation method

• Main Authors: Kishimura, Shinji, Endo, Masayuki, Sasago, Masaru, Shirai, Masamitsu, Tsunooka, Masahiro
• Format: Patent
• Language: English
• Published: 10.02.2004

The present invention relates to a pattern formation method and a pattern formation material, and more particularly, it relates to a pattern formation method for forming a resist pattern, used for forming a semiconductor device or a semiconductor integrated circuit on a semiconductor substrate, by using exposing light of a wavelength shorter than a 180 nm band and a pattern formation material used in the pattern formation method. A resist film is formed by applying, on a substrate, a pattern formation material containing a polymer including a first unit represented by Chemical Formula 1 and a second unit represented by Chemical Formula 2, and an acid generator: wherein Rand Rare the same or different and selected from the group consisting of an alkyl group, a chlorine atom and an alkyl group including a fluorine atom; Ris a protecting group released by an acid; and m is an integer of 0 through 5. Subsequently, the resist film is irradiated with exposing light of a wavelength shorter than a 180 nm band for pattern exposure, and a resist pattern is formed by developing the resist film after the pattern exposure.