High precision integrated circuit capacitors

The present invention relates to a method for forming high precision integrated circuit capacitors using polysilicon and titanium nitride electrodes. A polysilicon layer () is formed on a dielectric region (). An optional metal silicide layer () can be formed on the polysilicon layer. A dielectric l...

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Bibliographic Details
Main Authors Wofford, Bill Alan, Nguyen, Robert
Format Patent
LanguageEnglish
Published 03.02.2004
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Summary:The present invention relates to a method for forming high precision integrated circuit capacitors using polysilicon and titanium nitride electrodes. A polysilicon layer () is formed on a dielectric region (). An optional metal silicide layer () can be formed on the polysilicon layer. A dielectric layer () is formed over the metal silicide layer and a conductive layer () formed over the dielectric layer. The formed layers are etched by a combination of multi-step dry and wet process to form high precision integrated circuit capacitors.