Expanded implantation of contact holes
1. Field Of The Invention A method of forming electrical contacts includes the step of implanting ions into a contact hole at an angle to create an enlarged plug enhancement region at the bottom of a contact hole. Thus, even if the contact hole is misaligned, over-sized, or over-etched, the enlarged...
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Main Authors | , , , |
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Format | Patent |
Language | English |
Published |
23.12.2003
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Online Access | Get full text |
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Summary: | 1. Field Of The Invention
A method of forming electrical contacts includes the step of implanting ions into a contact hole at an angle to create an enlarged plug enhancement region at the bottom of a contact hole. Thus, even if the contact hole is misaligned, over-sized, or over-etched, the enlarged plug enhancement region contains subsequently formed barrier layers and other conductive materials to reduce current leakage into the underlying substrate or into adjacent circuit elements. |
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