Expanded implantation of contact holes

1. Field Of The Invention A method of forming electrical contacts includes the step of implanting ions into a contact hole at an angle to create an enlarged plug enhancement region at the bottom of a contact hole. Thus, even if the contact hole is misaligned, over-sized, or over-etched, the enlarged...

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Bibliographic Details
Main Authors Rhodes, Howard E, Prall, Kirk D, Ireland, Philip J, Hagen, Kenneth N
Format Patent
LanguageEnglish
Published 23.12.2003
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Summary:1. Field Of The Invention A method of forming electrical contacts includes the step of implanting ions into a contact hole at an angle to create an enlarged plug enhancement region at the bottom of a contact hole. Thus, even if the contact hole is misaligned, over-sized, or over-etched, the enlarged plug enhancement region contains subsequently formed barrier layers and other conductive materials to reduce current leakage into the underlying substrate or into adjacent circuit elements.