Shroud nozzle for gas jet control in an extreme ultraviolet light source
The present invention is generally related to semiconductor lithography techniques and equipment, and more particularly to extreme ultraviolet (EUV) lithography. A gas jet nozzle () for an extreme-ultraviolet light (EUV) source, including a housing () having a front () and a back (). The housing ()...
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| Main Authors | , |
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| Format | Patent |
| Language | English |
| Published |
09.12.2003
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| Online Access | Get full text |
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| Summary: | The present invention is generally related to semiconductor lithography techniques and equipment, and more particularly to extreme ultraviolet (EUV) lithography.
A gas jet nozzle () for an extreme-ultraviolet light (EUV) source, including a housing () having a front () and a back (). The housing () is coupleable to a primary gas source () and a secondary gas source () and is adapted to. expel primary gas () and secondary gas () from the housing front (). The housing () has a gas-expelling primary channel () located centrally within the housing () and a gas-expelling secondary channel () proximate the primary channel (). The primary channel () may be circular and the secondary channel () may be annular, surrounding the primary channel (). A secondary gas stream () expelled from the secondary channel () restricts the lateral expansion of a primary gas stream () expelled from the primary channel (), optimizing gas jet properties and reducing heating and erosion of the nozzle (). |
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