GaN based group III-V nitride semiconductor light-emitting diode and method for fabricating the same

Priority is claimed to Patent Application Numbers 2000-77746, filed in the Republic of Korea on Dec. 18, 2000 and 2001-4035 filed in Republic of Korea on Jan. 29, 2001, herein incorporated by reference. A GaN based III-V nitride semiconductor light-emitting device and a method for fabricating the sa...

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Main Authors Kwak, Joon-seop, Lee, Kyo-yeol, Cho, Jae-hee, Chae, Su-hee
Format Patent
LanguageEnglish
Published 02.12.2003
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Abstract Priority is claimed to Patent Application Numbers 2000-77746, filed in the Republic of Korea on Dec. 18, 2000 and 2001-4035 filed in Republic of Korea on Jan. 29, 2001, herein incorporated by reference. A GaN based III-V nitride semiconductor light-emitting device and a method for fabricating the same are provided. In the GaN based III-V nitride semiconductor light-emitting device including first and second electrodes arranged facing opposite directions or the same direction with a high-resistant substrate therebetween and material layers for light emission or lasing, the second electrode directly contacts a region of the outmost material layer exposed through an etched region of the high-resistant substrate. A thermal conductive layer may be formed on the bottom of the high-resistant substrate to cover the exposed region of the outmost material layer.
AbstractList Priority is claimed to Patent Application Numbers 2000-77746, filed in the Republic of Korea on Dec. 18, 2000 and 2001-4035 filed in Republic of Korea on Jan. 29, 2001, herein incorporated by reference. A GaN based III-V nitride semiconductor light-emitting device and a method for fabricating the same are provided. In the GaN based III-V nitride semiconductor light-emitting device including first and second electrodes arranged facing opposite directions or the same direction with a high-resistant substrate therebetween and material layers for light emission or lasing, the second electrode directly contacts a region of the outmost material layer exposed through an etched region of the high-resistant substrate. A thermal conductive layer may be formed on the bottom of the high-resistant substrate to cover the exposed region of the outmost material layer.
Author Kwak, Joon-seop
Chae, Su-hee
Cho, Jae-hee
Lee, Kyo-yeol
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Snippet Priority is claimed to Patent Application Numbers 2000-77746, filed in the Republic of Korea on Dec. 18, 2000 and 2001-4035 filed in Republic of Korea on Jan....
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Title GaN based group III-V nitride semiconductor light-emitting diode and method for fabricating the same
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