GaN based group III-V nitride semiconductor light-emitting diode and method for fabricating the same
Priority is claimed to Patent Application Numbers 2000-77746, filed in the Republic of Korea on Dec. 18, 2000 and 2001-4035 filed in Republic of Korea on Jan. 29, 2001, herein incorporated by reference. A GaN based III-V nitride semiconductor light-emitting device and a method for fabricating the sa...
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Main Authors | , , , |
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Format | Patent |
Language | English |
Published |
02.12.2003
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Online Access | Get full text |
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Summary: | Priority is claimed to Patent Application Numbers 2000-77746, filed in the Republic of Korea on Dec. 18, 2000 and 2001-4035 filed in Republic of Korea on Jan. 29, 2001, herein incorporated by reference.
A GaN based III-V nitride semiconductor light-emitting device and a method for fabricating the same are provided. In the GaN based III-V nitride semiconductor light-emitting device including first and second electrodes arranged facing opposite directions or the same direction with a high-resistant substrate therebetween and material layers for light emission or lasing, the second electrode directly contacts a region of the outmost material layer exposed through an etched region of the high-resistant substrate. A thermal conductive layer may be formed on the bottom of the high-resistant substrate to cover the exposed region of the outmost material layer. |
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