Fabrication of three dimensional container diode for use with multi-state material in a non-volatile memory cell

1. Field of the Invention A vertically oriented diode for use in delivering current to a multi-state memory element in a memory cell. A vertical diode may be disposed in a diode container extending downwardly from a top of a silicon or oxide layer, and may be formed of a combination of silicon and/o...

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Bibliographic Details
Main Authors Gonzalez, Fernando, Turi, Raymond A, Wolstenholme, Graham R, Ingalls, Charles L
Format Patent
LanguageEnglish
Published 25.11.2003
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Summary:1. Field of the Invention A vertically oriented diode for use in delivering current to a multi-state memory element in a memory cell. A vertical diode may be disposed in a diode container extending downwardly from a top of a silicon or oxide layer, and may be formed of a combination of silicon and/or metal layers disposed proximate to inner surfaces of a diode container. A multi-state memory element may be formed of a multi-state material, such as a chalcogenide, above a diode to complete a memory cell.