Nitride semiconductor laser device and method for manufacturing the same

1. Field of the Invention A group-III nitride semiconductor laser device with excellent optical characteristics and its manufacturing method are provided. The method does not include steps that require high assembly precision. The group-III nitride semiconductor laser device comprises a substrate wh...

Full description

Saved in:
Bibliographic Details
Main Authors Miyachi, Mamoru, Ota, Hiroyuki
Format Patent
LanguageEnglish
Published 11.11.2003
Online AccessGet full text

Cover

More Information
Summary:1. Field of the Invention A group-III nitride semiconductor laser device with excellent optical characteristics and its manufacturing method are provided. The method does not include steps that require high assembly precision. The group-III nitride semiconductor laser device comprises a substrate which has a cut-out portion. A laser facet of a multi-layer body is located near the cut-out portion of the substrate.