Method of improving the fabrication of etched semiconductor devices

This invention relates to a method of improving the fabrication of etched semiconductor devices by using a patterned adhesion promoter layer over a hydrocarbon planarization material. More specifically, the present invention improves the bonding of a metal interconnect layer to a hydrocarbon planari...

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Main Authors Joseph, John R, Luo, Wenlin, Lear, Kevin L, Bryan, Robert P
Format Patent
LanguageEnglish
Published 11.11.2003
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Abstract This invention relates to a method of improving the fabrication of etched semiconductor devices by using a patterned adhesion promoter layer over a hydrocarbon planarization material. More specifically, the present invention improves the bonding of a metal interconnect layer to a hydrocarbon planarization material, such as polyimide, by inserting an adhesion promotion layer, such as silicon nitride, between the hydrocarbon planarization material and the metal interconnect layer. This invention relates to a method of improving the fabrication of etched semiconductor devices by using a patterned adhesion promoter layer over a hydrocarbon planarization material. More specifically, the present invention improves the bonding of a metal interconnect layer to a hydrocarbon planarization material, such as polyimide, by inserting an adhesion promotion layer, such as silicon nitride, between the hydrocarbon planarization material and the metal interconnect layer. A process for improving the fabrication of etched semiconductor devices, comprises the steps of: (1) depositing a hydrocarbon planarization material over a substrate; (2) depositing an adhesion promoter over the hydrocarbon planarization material; (3) defining a first mask and etching back the adhesion promoter so as to form an adhesion promoter pad over a portion of the hydrocarbon planarization material; and (4) depositing a first metal over the adhesion promoter pad.
AbstractList This invention relates to a method of improving the fabrication of etched semiconductor devices by using a patterned adhesion promoter layer over a hydrocarbon planarization material. More specifically, the present invention improves the bonding of a metal interconnect layer to a hydrocarbon planarization material, such as polyimide, by inserting an adhesion promotion layer, such as silicon nitride, between the hydrocarbon planarization material and the metal interconnect layer. This invention relates to a method of improving the fabrication of etched semiconductor devices by using a patterned adhesion promoter layer over a hydrocarbon planarization material. More specifically, the present invention improves the bonding of a metal interconnect layer to a hydrocarbon planarization material, such as polyimide, by inserting an adhesion promotion layer, such as silicon nitride, between the hydrocarbon planarization material and the metal interconnect layer. A process for improving the fabrication of etched semiconductor devices, comprises the steps of: (1) depositing a hydrocarbon planarization material over a substrate; (2) depositing an adhesion promoter over the hydrocarbon planarization material; (3) defining a first mask and etching back the adhesion promoter so as to form an adhesion promoter pad over a portion of the hydrocarbon planarization material; and (4) depositing a first metal over the adhesion promoter pad.
Author Joseph, John R
Lear, Kevin L
Bryan, Robert P
Luo, Wenlin
Author_xml – sequence: 1
  fullname: Joseph, John R
– sequence: 2
  fullname: Luo, Wenlin
– sequence: 3
  fullname: Lear, Kevin L
– sequence: 4
  fullname: Bryan, Robert P
BookMark eNqNyj0OwjAMQOEMMJSfO_gCSEiUqnsF6sLGjoLjNJaoXSVuz48qcQCmb3hv5zaiQpXrHmRJA2gEHqesC8sAlgiif2dGb6yyRjJMFKDQyKgSZjTNEGhhpHJw2-g_hY4_9w7ut2fXn-YyeSOx8hqyXzk3TX1t6_byx_IFaWk1YA
ContentType Patent
CorporateAuthor Emcore Corporation
CorporateAuthor_xml – name: Emcore Corporation
DBID EFH
DatabaseName USPTO Issued Patents
DatabaseTitleList
Database_xml – sequence: 1
  dbid: EFH
  name: USPTO Issued Patents
  url: http://www.uspto.gov/patft/index.html
  sourceTypes: Open Access Repository
DeliveryMethod fulltext_linktorsrc
ExternalDocumentID 06645848
GroupedDBID EFH
ID FETCH-uspatents_grants_066458483
IEDL.DBID EFH
IngestDate Sun Mar 05 22:31:16 EST 2023
IsOpenAccess true
IsPeerReviewed false
IsScholarly false
Language English
LinkModel DirectLink
MergedId FETCHMERGED-uspatents_grants_066458483
OpenAccessLink https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/6645848
ParticipantIDs uspatents_grants_06645848
PatentNumber 6645848
PublicationCentury 2000
PublicationDate 20031111
PublicationDateYYYYMMDD 2003-11-11
PublicationDate_xml – month: 11
  year: 2003
  text: 20031111
  day: 11
PublicationDecade 2000
PublicationYear 2003
References Jimbo et al. (5756402) 19980500
Kuo et al. (5869219) 19990200
Loewenstein (4857140) 19890800
Liu et al. (5989979) 19991100
Chikaki (4907039) 19900300
Aronowitz et al. (6033998) 20000300
Tu et al. (5962344) 19991000
Lee (6242400) 20010600
Nanda et al. (4978419) 19901200
Lee et al. (6008137) 19991200
Kim et al. (6037269) 20000300
Puntambekar et al. (5714037) 19980200
Armacost et al. (6051504) 20000400
Kawamoto et al. (4529476) 19850700
Rath et al. (5965465) 19991000
Moriya et al. (4377438) 19830300
Bruce et al. (4612805) 19860900
Kim et al. (5834329) 19981100
Brankner (5928964) 19990700
Chen et al. (4800420) 19890100
References_xml – year: 19850700
  ident: 4529476
  contributor:
    fullname: Kawamoto et al.
– year: 20000400
  ident: 6051504
  contributor:
    fullname: Armacost et al.
– year: 20000300
  ident: 6037269
  contributor:
    fullname: Kim et al.
– year: 19981100
  ident: 5834329
  contributor:
    fullname: Kim et al.
– year: 19990200
  ident: 5869219
  contributor:
    fullname: Kuo et al.
– year: 19991000
  ident: 5962344
  contributor:
    fullname: Tu et al.
– year: 19980200
  ident: 5714037
  contributor:
    fullname: Puntambekar et al.
– year: 19991200
  ident: 6008137
  contributor:
    fullname: Lee et al.
– year: 19890800
  ident: 4857140
  contributor:
    fullname: Loewenstein
– year: 20000300
  ident: 6033998
  contributor:
    fullname: Aronowitz et al.
– year: 19830300
  ident: 4377438
  contributor:
    fullname: Moriya et al.
– year: 20010600
  ident: 6242400
  contributor:
    fullname: Lee
– year: 19990700
  ident: 5928964
  contributor:
    fullname: Brankner
– year: 19860900
  ident: 4612805
  contributor:
    fullname: Bruce et al.
– year: 19890100
  ident: 4800420
  contributor:
    fullname: Chen et al.
– year: 19901200
  ident: 4978419
  contributor:
    fullname: Nanda et al.
– year: 19980500
  ident: 5756402
  contributor:
    fullname: Jimbo et al.
– year: 19991000
  ident: 5965465
  contributor:
    fullname: Rath et al.
– year: 19900300
  ident: 4907039
  contributor:
    fullname: Chikaki
– year: 19991100
  ident: 5989979
  contributor:
    fullname: Liu et al.
Score 2.5739388
Snippet This invention relates to a method of improving the fabrication of etched semiconductor devices by using a patterned adhesion promoter layer over a hydrocarbon...
SourceID uspatents
SourceType Open Access Repository
Title Method of improving the fabrication of etched semiconductor devices
URI https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/6645848
hasFullText 1
inHoldings 1
isFullTextHit
isPrint
link http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV3PS8MwFH5sQ1BPiorbnOTgNbqubZqex0oRJjso7DaSJhFBk9F2-O-bl87hxUFOCbw8El7ej3z5AvCgpOZVmjLKczWjicxyynUmaMQqHSUiM1piHXL5wsq35HmdrntQHt7CfHkzoluvS_O4a7atC-BKf7x3G0878mfkCLTIPvBtP51QK2WeGMMbP96HPp8itGtRlOdw6kX4kM22zR-nUVzAySr0XkJP2yuYL8NnzcQZ8vGbyRMffhEjZL2vnOFgWEdFGkStO4t0rK4mSgeLvgZSLF7nJT3MuHmvEcmyme41i29g4DN6fQskl7GMw2-bMyTs49yIXEhexZHQqUnEEIb_ihkdGRvDWYc1i3y7g0Fb7_TE-8xW3ocF-QFE8HjX
link.rule.ids 230,309,786,808,891,64396
linkProvider USPTO
linkToPdf http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV07T8MwED6VgnhMIEC0vDywGkjzcubSKDxaZQCpW2THNkICp0pS8ffxOW3FApInWzqfbJ_v4fN3ADdSKFaGYURZIkc0EHFCmYo59aJSeQGPtRIYh5zOouwteJqH8x5km78wX1aM6MLy0twum0VbueRKe713G0878GfECDSIPvBtPisuc6nvoghf_NgWbKOOxbM-SbMD2LNErNFm2uaX2kgPYSd3vUfQU-YYxlNXrplUmnysfXliDTCiuahXsTMcdCspSYN565VBQNaqJlI5mT4Bkk5exxndzFi815jLUtyvePNPoW99enUGJBG-8F29zRFC9jGmecIFK32Pq1AHfACDP8kM_xm7ht38IS1eHmfP57DfJZ55tl1Av62X6tIq0FZcubX5AV0Ze9M
openUrl ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Apatent&rft.title=Method+of+improving+the+fabrication+of+etched+semiconductor+devices&rft.inventor=Joseph%2C+John+R&rft.inventor=Luo%2C+Wenlin&rft.inventor=Lear%2C+Kevin+L&rft.inventor=Bryan%2C+Robert+P&rft.number=6645848&rft.date=2003-11-11&rft.externalDBID=n%2Fa&rft.externalDocID=06645848