Method of improving the fabrication of etched semiconductor devices
This invention relates to a method of improving the fabrication of etched semiconductor devices by using a patterned adhesion promoter layer over a hydrocarbon planarization material. More specifically, the present invention improves the bonding of a metal interconnect layer to a hydrocarbon planari...
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Main Authors | , , , |
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Format | Patent |
Language | English |
Published |
11.11.2003
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Online Access | Get full text |
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Summary: | This invention relates to a method of improving the fabrication of etched semiconductor devices by using a patterned adhesion promoter layer over a hydrocarbon planarization material. More specifically, the present invention improves the bonding of a metal interconnect layer to a hydrocarbon planarization material, such as polyimide, by inserting an adhesion promotion layer, such as silicon nitride, between the hydrocarbon planarization material and the metal interconnect layer.
This invention relates to a method of improving the fabrication of etched semiconductor devices by using a patterned adhesion promoter layer over a hydrocarbon planarization material. More specifically, the present invention improves the bonding of a metal interconnect layer to a hydrocarbon planarization material, such as polyimide, by inserting an adhesion promotion layer, such as silicon nitride, between the hydrocarbon planarization material and the metal interconnect layer. A process for improving the fabrication of etched semiconductor devices, comprises the steps of: (1) depositing a hydrocarbon planarization material over a substrate; (2) depositing an adhesion promoter over the hydrocarbon planarization material; (3) defining a first mask and etching back the adhesion promoter so as to form an adhesion promoter pad over a portion of the hydrocarbon planarization material; and (4) depositing a first metal over the adhesion promoter pad. |
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