Pattern formation material and pattern formation method
The present invention relates to method and material for forming a pattern, and more particularly, it relates to a method for forming a resist pattern, used for forming a semiconductor device or a semiconductor integrated circuit on a semiconductor substrate, by using exposing light of a wavelength...
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| Main Authors | , , , , |
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| Format | Patent |
| Language | English |
| Published |
11.11.2003
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| Online Access | Get full text |
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| Summary: | The present invention relates to method and material for forming a pattern, and more particularly, it relates to a method for forming a resist pattern, used for forming a semiconductor device or a semiconductor integrated circuit on a semiconductor substrate, by using exposing light of a wavelength of a 1 nm through 30 nm band or a 110 nm through 180 nm band and a pattern formation material used in the method.
A pattern formation material of this invention contains a polymer including a first unit represented by Chemical Formula 1 and a second unit represented by Chemical Formula 2, and an acid generator: wherein Rand Rare the same or different and selected from the group consisting of an alkyl group, a chlorine atom and an alkyl group including a chlorine atom; R, R, Rand Rare a hydrogen atom or a fluorine atom, at least one of which is a fluorine atom; and Ris a protecting group released by an acid. |
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