Integrated process for depositing layer of high-K dielectric with in-situ control of K value and thickness of high-K dielectric layer

The invention relates generally to the fabrication of semiconductor devices and, more particularly, to the fabrication of a dielectric material film for use in semiconductor devices. An apparatus and a method of depositing a dielectric material film, including steps of initiating a process of deposi...

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Bibliographic Details
Main Authors Halliyal, Arvind, Arsania, Farzad
Format Patent
LanguageEnglish
Published 04.11.2003
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Summary:The invention relates generally to the fabrication of semiconductor devices and, more particularly, to the fabrication of a dielectric material film for use in semiconductor devices. An apparatus and a method of depositing a dielectric material film, including steps of initiating a process of depositing a dielectric material film under at least one controllable initial condition in an apparatus comprising a dielectric material deposition chamber and a spectroscopic ellipsometer; and measuring, by the spectroscopic ellipsometer, at least one ellipsometric parameter of the dielectric material film during the process of depositing the film.