Dual hardmask single damascene integration scheme in an organic low k ILD

• Main Authors: Cowley, Andy, Kaltalioglu, Erdem, Stetter, Michael
• Format: Patent
• Language: English
• Published: 28.10.2003

1. Field of the Invention Process of making a semiconductor using dual inorganic hardmask in single damascene process integration scheme in an organic low k interlayer dielectric (ILD) by:providing semiconductor substrate;depositing organic low k ILD layer on substrate;forming hardmask on organic low k ILD layer and forming sacrificial hardmask on hardmask forming a patterned photoresist layer on sacrificial hardmask etching selective to sacrificial hardmask and stripping photoresist;etching of hardmask in which the etch is selective to the organic low k ILD layer;depositing a liner or conformal barrier layer over the substrate, organic low k ILD layer, hardmask and hardmask forming a plated metal layer over the liner or conformal barrier layer; andremoving metal layer and removing liner with simultaneous removal of sacrificial hardmask so that facets in sacrificial hardmask are removed during liner/sacrificial hardmask removal.