Semiconductor memory device and memory system

• Main Authors: Muranaka, Masaya, Miyatake, Shinichi, Suzuki, Yukihide, Kenmizaki, Kanehide, Morino, Makoto, Kitame, Tetsuya
• Format: Patent
• Language: English
• Published: 14.10.2003

The present invention relates to a semiconductor memory device and a memory system, and principally to a high storage capacity type dynamic RAM (Random Access Memory) and a technique effective for use in a data holding technique employed in a memory system using the dynamic RAM. Two memory cells in different memory arrays are simultaneously selected in accordance with the designation of a specific write operation mode to associate a logic 1 of a write signal with a state in which an electric charge exists in each capacitor. Further, a logic 0 of the write signal is associated with a state in which no electric charge exists in the capacitor to write the same write signal. Two dynamic memory cells in different memory arrays are simultaneously selected in accordance with the designation of a specific read operation mode to associate a state in which an electric charge exists in a capacitor of each dynamic memory cell with a logic 1 of a read signal and associate a state in which no electric charge exists in the capacitor with a logic 0 of the read signal in response to a write operation. Thus, the logics 1 of the two read signals are preferentially output.