Method for the production of an epitaxially grown semiconductor wafer

1. Field of the Invention A method for the production of a semiconductor wafer having a front and a back and an epitaxial layer of semiconductor material deposited on the front, includes the following process steps:(a) preparing a substrate wafer having a polished front and a specific thickness;(b)...

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Bibliographic Details
Main Authors Schmolke, Rüdiger, Schauer, Reinhard, Obermeier, Günther, Gräf, Dieter, Storck, Peter, Messmann, Klaus, Siebert, Wolfgang
Format Patent
LanguageEnglish
Published 07.10.2003
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Summary:1. Field of the Invention A method for the production of a semiconductor wafer having a front and a back and an epitaxial layer of semiconductor material deposited on the front, includes the following process steps:(a) preparing a substrate wafer having a polished front and a specific thickness;(b) pretreating the front of the substrate wafer in the presence of HCl gas and a silane source at a temperature of from 950 to 1250 degrees Celsius in an epitaxy reactor, the thickness of the substrate wafer remaining substantially unchanged; and(c) depositing the epitaxial layer on the front of the pretreated substrate wafer.