Method for forming serrated contact opening in the semiconductor device

The present invention relates generally to semiconductor manufacturing and more particularly to a method for forming a contact to a semiconductor region of a semiconductor device. A method and apparatus for decreasing contact resistance between a ohmic contact () and a semiconductor material () are...

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Bibliographic Details
Main Authors Holm, Paige M, Hartin, Olin L, Li, H. Philip
Format Patent
LanguageEnglish
Published 22.07.2003
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Summary:The present invention relates generally to semiconductor manufacturing and more particularly to a method for forming a contact to a semiconductor region of a semiconductor device. A method and apparatus for decreasing contact resistance between a ohmic contact () and a semiconductor material () are disclosed. Increased contact resistance, which occurs as a result of encroachment of the ohmic contact () into the semiconductor material () is compensated for by notching edges of the ohmic contact () to increase the effective surface area between abutting surfaces of the ohmic contact () and semiconductor material (). The increase in surface area increases the effective transfer length of the contact, which correspondingly reduces contact resistance and improves device performance.