Method for clamping a semiconductor device in a manufacturing process

• Main Authors: Kraxenberger, Manfred, Thümmel, Ines, Spuler, Bruno, Schedel, Thorsten, Mautz, Karl
• Format: Patent
• Language: English
• Published: 15.07.2003

The invention relates to a method for clamping a semiconductor device in a manufacturing process using a wafer with deposited material layers causing wafer bowing stress, wherein in particular the wafer is at least 200 mm in diameter. There is disclosed a method for clamping a semiconductor wafer, preferably suitable for a wafer with a diameter of 300 mm or larger. After depositing at least one encapsulating material layer over the front side and backside of the wafer, the material layer over the front side of the wafer is etched selectively to form a predetermined structure in following process steps. Wafer warpage is caused as a result of unequal wafer bowing stress of the material layer. By removing the material layer over the backside of the wafer partially or completely in accordance with the desired reduction of the bowing stress wafer warpage is reduced. In a further course of the manufacturing process, the semiconductor device is clamped electrostatically, physically or by use of vacuum.