Semiconductor structure for use with high-frequency signals

• Main Authors: El-Zein, Nada, Ramdani, Jamal, Eisenbeiser, Kurt, Droopad, Ravindranath
• Format: Patent
• Language: English
• Published: 08.07.2003

This invention relates generally to semiconductor structures and devices and to a method for their fabrication, and more specifically to compound semiconductor structures and devices and to the fabrication and use of semiconductor structures, devices, and integrated circuits that include a monocrystalline compound semiconductor material. More specifically, this invention relates to semiconductor structures for use with microwave and radio-frequency (RF) signals, and to a method for their fabrication. High quality epitaxial layers of compound semiconductor materials can be grown overlying large silicon wafers by first growing an accommodating buffer layer on a silicon wafer. The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. These semiconductor materials have applications involving communications with high frequency signals including intelligent transportation systems such as automobile radar systems, smart cruise control systems, collision avoidance systems, and automotive navigation systems; and electronic payment systems that use microwave or RF signals such as electronic toll payment for various transportation systems including train fares, and toll roads, parking structures, and toll bridges for automobiles.