Pattern formation material and method
The present invention relates to pattern formation material and method. More particularly, it relates to a pattern formation method employed for forming a resist pattern, used for forming a semiconductor device or a semiconductor integrated circuit on a semiconductor substrate, by using exposing lig...
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Main Authors | , , , |
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Format | Patent |
Language | English |
Published |
10.06.2003
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Online Access | Get full text |
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Summary: | The present invention relates to pattern formation material and method. More particularly, it relates to a pattern formation method employed for forming a resist pattern, used for forming a semiconductor device or a semiconductor integrated circuit on a semiconductor substrate, by using exposing light of a wavelength of a 1 nm through 30 nm band or a 110 nm through 180 nm band, and a pattern formation material used in the same.
In the pattern formation method of this invention, a resist film is formed by applying, on a substrate, a pattern formation material containing a polymer including a first unit represented by Chemical Formula 1 and a second unit represented by Chemical Formula 2, and an acid generator, wherein Rand Rare the same or different and selected from the group consisting of an alkyl group, a chlorine atom and an alkyl group including a chlorine atom; and Ris a protecting group released by an acid. Then, the resist film is irradiated with exposing light of a wavelength of a 1 nm through 30 nm band or a 110 nm through 180 nm band for pattern exposure, and a resist pattern is formed by developing the resist film after the pattern exposure. |
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