Pattern formation material and method

• Main Authors: Kishimura, Shinji, Sasago, Masaru, Shirai, Masamitsu, Tsunooka, Masahiro
• Format: Patent
• Language: English
• Published: 10.06.2003

The present invention relates to pattern formation material and method. More particularly, it relates to a pattern formation method employed for forming a resist pattern, used for forming a semiconductor device or a semiconductor integrated circuit on a semiconductor substrate, by using exposing light of a wavelength of a 1 nm through 30 nm band or a 110 nm through 180 nm band, and a pattern formation material used in the same. In the pattern formation method of this invention, a resist film is formed by applying, on a substrate, a pattern formation material containing a polymer including a first unit represented by Chemical Formula 1 and a second unit represented by Chemical Formula 2, and an acid generator, wherein Rand Rare the same or different and selected from the group consisting of an alkyl group, a chlorine atom and an alkyl group including a chlorine atom; and Ris a protecting group released by an acid. Then, the resist film is irradiated with exposing light of a wavelength of a 1 nm through 30 nm band or a 110 nm through 180 nm band for pattern exposure, and a resist pattern is formed by developing the resist film after the pattern exposure.