Non-volatile ferroelectric capacitor memory circuit having nondestructive read capability

• Main Authors: Chen, Shue-Shuen, Lung, Hsiang-Lan
• Format: Patent
• Language: English
• Published: 03.06.2003

The present invention relates to a non-volatile ferroelectric capacitor-based memory circuit, and more particularly related to a non-destructive ferroelectric capacitor-based memory circuit method. A non-destructive ferroelectric capacitor-based memory circuit has a plurality of word lines located in parallel to each other. A plurality of bit lines is located across the word lines and a plurality of memory cells is located at intersections between the word lines and the bit lines. Each of the memory cells further has a MOS transistor and two ferroelectric capacitors coupled together in series to have a common node to couple with the transistor, and two plate lines coupled with two non-common nodes of the two series ferroelectric capacitors, respectively.