Method for manufacturing substrate for inspecting semiconductor device

• Main Authors: Kanamaru, Masatoshi, Hosogane, Atsushi, Endou, Yoshihige, Kouno, Ryuji, Miura, Hideo, Tanaka, Shinji, Ohta, Hiroyuki, Ariga, Akihiko, Ban, Naoto, Aoki, Hideyuki
• Format: Patent
• Language: English
• Published: 20.05.2003

The present invention relates to a testing device for a semiconductor element or a semiconductor device. More particularly, the invention relates to a method for manufacturing a substrate used to inspect the semiconductor element, which substrate constitutes the inspecting device, in order to realize a semiconductor element inspecting device capable of performing efficient inspection for the electric characteristic of the semiconductor element in a semiconductor manufacturing process, such as wafer probing inspection, burn-in inspection carried out in a wafer state or the like. For an inspection tray, a silicon substrate including a beam or a diaphragm, a probe and wiring is used. To highly accurately position a chip to be inspected, a second substrate for alignment is disposed on the substrate. To position the probe having wiring disposed on the first substrate and the electrode pad of the chip to be inspected, a projection or a groove is formed in each of both substrates. Preferably, the projection or groove should be formed by silicon anisotorpic etching to have a (111) crystal surface. As another machining method, dry etching can be used for machining the positioning projection or groove. By using an inductively coupled plasma-reactive ion etching (ICP-RIE) device for the dry etching, a vertical column or groove can be easily machined.